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Measurement Specifications
CSM/Win SEMICONDUCTOR MEASUREMENT SYSTEM Calculated Parameter Specifications

 Junction Doping Profiles:
Range: 1x1013 ions/cm3 to 1xlO18 ions/cm3, 0.01 microns to 100 microns. Depth and doping ranges limited by zero-bias depletion width, breakdown voltage, and instrument voltage range.
Typical Values: Doping: 1x1015 ions/cm3, Depth: 1 micron to 17 microns. Doping: 1x1016 ions/cm3, Depth: 0.33 microns to 2.5 microns.
Accuracy: Typically ±2%, dependent on supplied device area.


 MOS DOPING PROFILES:
Range: 2x1014 ions/cm3 to 5x1017 ions/cm3, 0.01 microns to 10 microns. Depth and doping ranges limited by bulk breakdown voltage of semiconductor, oxide breakdown, and instrument voltage range.
Typical Values: Doping: 1x1015 ions/cm3, Depth: 0.01 microns to 5 microns. Doping: 1x1016 ions/cm3, Depth: 0.01 microns to 2 microns.
Accuracy: Typically ±5%, dependent on supplied device area.


 Implant Dose Calculations:
Range: 5x1010 ions/cm2 to 5x1012 ions/cm2.
Accuracy: Typically ±8%, dependent on supplied oxide thickness.


 Lifetime
Range: 0.1 microsecond to 0.1 second.
Typical Values: 100 microseconds to 1000 microseconds
Accuracy: Typically ±8%, dependent on user supplied parameters


 Flatband Voltage Shift:
Range: 0.005 Volts to 50 Volts.
Typical Values: 0.05 Volts to 0.2 Volts.
Accuracy: Typically ±2%, or ±0.005 Volts, dependent on supplied oxide thickness.


 Mobile Ionic Charge Concentration: (Bias-Temperature Vfb Shift Method)
Range: 1x1010 ions/cm2 to 1x1013 ions/cm2.
Typical Values: 3x1010 ions/cm2.
Accuracy: Typically ±2%, ± 1x1010 ions/cm2, dependent on user supplied oxide thickness.


 Mobile Ionic Charge Concentration: (Quasi-static/TVS Method)
Range: 1x109 ions/cm2 to 1x1012 ions/cm2.
Typical Values: 3x1010 ions/cm2.
Accuracy: Typically ±5%, ±1x109 ions/cm2, dependent on user supplied oxide thickness.


 Interface Trap Density: (Quasi-Static/High Frequency Method)
Range: 2x1010 ions/cm2eV to 1x1012 ions/cm2/eV
Typical Values: 3x1010ions/cm2/eV, midgap.
Accuracy: Typically ±10%, ±1x1010ions/cm2/eV dependent on user supplied parameters.


 Interface Trap Density: (Variable Frequency Method)
Range: 2x109 ions/cm2eV to 1x1012 ions/cm2eV
Typical Values: 2x1010 ions/cm2eV midgap.
Accuracy: Typically ±7%, ±3x109 ions/cm2eV, dependent on user supplied parameters.


 Current Voltage-Plots:
Range: ±100 Volts, ±10 fA to ±1 mA.
Accuracy: Typically ±1%.


 Junction Diode Parameters:
Range: Rs: 0.1 to 1000 Ohms, Is: 1x10-13 to 1x10-8 Amps, n: 1.0 to 2.0.
Typical Values: Rs: 2 Ohms, Is: 1x10-11 Amps, n: 1.2.
Accuracy: Typically ±5%.


 Oxide Breakdown Field: (Ramped Voltage or Forced Current Method)
Range: 0 to 20 MV/cm.
Typical Values: 8 MV/cm.
Accuracy: Typically ±5%, dependent on user supplied oxide thickness.

Notes:
1. Calculated parameter accuracies are given for measurements where appropriate corrections, such as those for series resistance effects, have been used. Large errors may result where needed corrections are not performed.
2. Some of the parameters listed are obtained only by using special options such as a quasi-static option, a current-voltage option, or a variable frequency option.
3. Some of the parameter accuracies shown may be affected by the type of capacitance/conductance meter used.
4. Doping and depth ranges assume a CSM/Win with ± 100 Volt bias range.

For more information on MDC product lines visit their website at http://www.mdc4cv.com